Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells

The binding energy of Wannier excitons bound to ionized-donor impurities, D+, in GaAs/AlxGa1−xAs quantum-wells, is studied using the effective-mass approximation within a variational approach, as a function of the well width for different barrier heights and growth-direction applied magnetic fields....

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Fecha de publicación:
2010
Institución:
Ministerio de Ciencia, Tecnología e Innovación
Repositorio:
Repositorio Minciencias
Idioma:
eng
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oai:repositorio.minciencias.gov.co:20.500.14143/18428
Acceso en línea:
https://repositorio.minciencias.gov.co/handle/20.500.14143/18428
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Campos magnéticos
Energía mecánica
Campos electromagnéticos
Energía mecánica
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spelling Colombia2018-08-02T22:34:22Z2018-08-02T22:34:22Z2010-11info:eu-repo/date/embargoEnd/2024-01-311386-9477https://repositorio.minciencias.gov.co/handle/20.500.14143/1842810.1016/j.physe.2010.06.021The binding energy of Wannier excitons bound to ionized-donor impurities, D+, in GaAs/AlxGa1−xAs quantum-wells, is studied using the effective-mass approximation within a variational approach, as a function of the well width for different barrier heights and growth-direction applied magnetic fields. Our calculations are devoted to heavy-hole magnetoexcitons. As expected, we found that the binding energy of a heavy-hole exciton bound to a donor-ionized impurity increases with the Al concentration, as well as with the applied magnetic field. Otherwise, we found that it is higher than the corresponding for heavy-hole excitons without impurities reported by other authors. Moreover we found that the binding energy of the heavy-hole exciton bound to a donor-ionized impurity is higher (lower) for larger (smaller) quantum well width. Finally we found that our results are in very good agreement when we compare with experimental and theoretical reports.Departamento Administrativo de Ciencia, Tecnología e Innovación [CO] Colciencias1106-452-21296Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicasnopdf8 páginasengControl cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a>Physica E: Low-dimensional Systems and Nanostructures; Vol. 43, Issue 1, November 2010, pp. 89-92Contiene 17 referencias bibliográficas. Véase el documento adjuntoMagnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wellsArtículo científicoinfo:eu-repo/semantics/articlehttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_2df8fbb1Administradores de ciencia y tecnologíaInvestigadoresCampos magnéticosEnergía mecánicaCampos electromagnéticosEnergía mecánicahttp://purl.org/coar/access_right/c_f1cfVivas Moreno, José JoaquinPorras Montenegro, NelsonUniversidad del Valle, Univallenelmonte@univalle.edu.coPrograma nacional de ciencias básicasComunidad científica colombiana0284-2008Artículos de investigaciónPublicationORIGINAL1-1-1-4-art.pdf1-1-1-4-art.pdfArticulo de Revista Physica E: Low-dimensional Systems and Nanostructuresapplication/pdf2044889https://repositorio.minciencias.gov.co/bitstreams/dbfb4240-cf1f-4188-be7c-1ca6905bd093/download18450cf7cd7790bd6948164237c0e8d8MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748https://repositorio.minciencias.gov.co/bitstreams/08813b5b-1c98-4134-957c-95beaa6e0f1b/download8a4605be74aa9ea9d79846c1fba20a33MD52TEXT1-1-1-4-art.pdf.txt1-1-1-4-art.pdf.txtExtracted texttext/plain2https://repositorio.minciencias.gov.co/bitstreams/e60760d5-deb8-4201-bd22-ee73142cd574/downloade1c06d85ae7b8b032bef47e42e4c08f9MD55THUMBNAIL1-1-1-4-art.pdf.jpg1-1-1-4-art.pdf.jpgGenerated Thumbnailimage/jpeg18869https://repositorio.minciencias.gov.co/bitstreams/b7636022-4528-4d52-af1b-b47ede1b3c48/download69469fc5861e81a212f0673d9133dc88MD5620.500.14143/18428oai:repositorio.minciencias.gov.co:20.500.14143/184282023-11-29 17:47:24.073restrictedhttps://repositorio.minciencias.gov.coRepositorio Institucional de Mincienciascendoc@minciencias.gov.co
dc.title.es_CO.fl_str_mv Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
title Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
spellingShingle Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
Campos magnéticos
Energía mecánica
Campos electromagnéticos
Energía mecánica
title_short Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
title_full Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
title_fullStr Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
title_full_unstemmed Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
title_sort Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
dc.subject.spines.none.fl_str_mv Campos magnéticos
Energía mecánica
Campos electromagnéticos
Energía mecánica
topic Campos magnéticos
Energía mecánica
Campos electromagnéticos
Energía mecánica
description The binding energy of Wannier excitons bound to ionized-donor impurities, D+, in GaAs/AlxGa1−xAs quantum-wells, is studied using the effective-mass approximation within a variational approach, as a function of the well width for different barrier heights and growth-direction applied magnetic fields. Our calculations are devoted to heavy-hole magnetoexcitons. As expected, we found that the binding energy of a heavy-hole exciton bound to a donor-ionized impurity increases with the Al concentration, as well as with the applied magnetic field. Otherwise, we found that it is higher than the corresponding for heavy-hole excitons without impurities reported by other authors. Moreover we found that the binding energy of the heavy-hole exciton bound to a donor-ionized impurity is higher (lower) for larger (smaller) quantum well width. Finally we found that our results are in very good agreement when we compare with experimental and theoretical reports.
publishDate 2010
dc.date.issued.none.fl_str_mv 2010-11
dc.date.accessioned.none.fl_str_mv 2018-08-02T22:34:22Z
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identifier_str_mv 1386-9477
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dc.language.iso.es_CO.fl_str_mv eng
language eng
dc.relation.ispartof.none.fl_str_mv Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a>
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dc.format.extent.es_CO.fl_str_mv 8 páginas
dc.coverage.spatial.es_CO.fl_str_mv Colombia
dc.source.es_CO.fl_str_mv Physica E: Low-dimensional Systems and Nanostructures; Vol. 43, Issue 1, November 2010, pp. 89-92
institution Ministerio de Ciencia, Tecnología e Innovación
dc.source.bibliographicCitation.es_CO.fl_str_mv Contiene 17 referencias bibliográficas. Véase el documento adjunto
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