Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells

The binding energy of Wannier excitons bound to ionized-donor impurities, D+, in GaAs/AlxGa1−xAs quantum-wells, is studied using the effective-mass approximation within a variational approach, as a function of the well width for different barrier heights and growth-direction applied magnetic fields. Our calculations are devoted to heavy-hole magnetoexcitons. As expected, we found that the binding energy of a heavy-hole exciton bound to a donor-ionized impurity increases with the Al concentration, as well as with the applied magnetic field. Otherwise, we found that it is higher than the corresponding for heavy-hole excitons without impurities reported by other authors. Moreover we found that the binding energy of the heavy-hole exciton bound to a donor-ionized impurity is higher (lower) for larger (smaller) quantum well width. Finally we found that our results are in very good agreement when we compare with experimental and theoretical reports.

• Fecha de publicación: 2010
• Institución: Ministerio de Ciencia, Tecnología e Innovación
• Repositorio: Repositorio Minciencias
• Idioma: eng
• OAI Identifier: oai:repositorio.minciencias.gov.co:20.500.14143/18428
• Acceso en línea: https://repositorio.minciencias.gov.co/handle/20.500.14143/18428
• Palabra clave: Campos magnéticos; Energía mecánica; Campos electromagnéticos; Energía mecánica
• License: http://purl.org/coar/access_right/c_f1cf