Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorpt...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2018
- Institución:
- Universidad del Rosario
- Repositorio:
- Repositorio EdocUR - U. Rosario
- Idioma:
- eng
- OAI Identifier:
- oai:repository.urosario.edu.co:10336/27635
- Acceso en línea:
- https://doi.org/10.1063/1.5012987
https://repository.urosario.edu.co/handle/10336/27635
- Palabra clave:
- Electromagnetism
Raman spectroscopy
Heterostructures
Doping
Nanowires
Finite-element analysis
- Rights
- License
- Restringido (Acceso a grupos específicos)
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fe833d2d-e690-4fc2-9070-3b14844850e4194747786006ae393e3-af0b-496c-9426-c36abc3cdf7b818f494a-9a83-4823-b8f9-5da2b82b0aff341232b0-a257-4e0e-a534-dd8a3b25098818cf83c1-b28a-4fc9-a91d-c0e4957d398161188177-22e8-457a-997c-9f3ee9b35242694b85bd-277e-4a0e-9e44-149ddcd2bb3ec24e4600-7c1b-4ffe-b668-1a71a24881c72020-08-19T14:43:05Z2020-08-19T14:43:05Z2018-03-16Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.application/pdfhttps://doi.org/10.1063/1.5012987ISSN: 0021-8979EISSN: 1089-7550https://repository.urosario.edu.co/handle/10336/27635engAmerican Institute of PhysicsNo. 11114302Journal of Applied PhysicsVol. 123Journal of Applied Physics, ISSN: 0021-8979;EISSN: 1089-7550, Vol.123, No.11 (2018); pp. 114302https://aip.scitation.org/doi/10.1063/1.5012987Restringido (Acceso a grupos específicos)http://purl.org/coar/access_right/c_16ecJournal of Applied Physicsinstname:Universidad del Rosarioreponame:Repositorio Institucional EdocURElectromagnetismRaman spectroscopyHeterostructuresDopingNanowiresFinite-element analysisElectromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approachEfectos de mejora del campo electromagnético en nanocables semiconductores del grupo IV. Un enfoque de espectroscopía RamanarticleArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501Pura, J. L.Anaya, Juan-ManuelSouto, J.Prieto, A. C.Rodríguez, A.Rodríguez, T.Periwal, P.Baron, T.Jiménez, J.10336/27635oai:repository.urosario.edu.co:10336/276352021-08-05 17:29:19.263https://repository.urosario.edu.coRepositorio institucional EdocURedocur@urosario.edu.co |
dc.title.spa.fl_str_mv |
Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach |
dc.title.TranslatedTitle.spa.fl_str_mv |
Efectos de mejora del campo electromagnético en nanocables semiconductores del grupo IV. Un enfoque de espectroscopía Raman |
title |
Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach |
spellingShingle |
Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach Electromagnetism Raman spectroscopy Heterostructures Doping Nanowires Finite-element analysis |
title_short |
Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach |
title_full |
Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach |
title_fullStr |
Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach |
title_full_unstemmed |
Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach |
title_sort |
Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach |
dc.subject.keyword.spa.fl_str_mv |
Electromagnetism Raman spectroscopy Heterostructures Doping Nanowires Finite-element analysis |
topic |
Electromagnetism Raman spectroscopy Heterostructures Doping Nanowires Finite-element analysis |
description |
Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires. |
publishDate |
2018 |
dc.date.created.spa.fl_str_mv |
2018-03-16 |
dc.date.accessioned.none.fl_str_mv |
2020-08-19T14:43:05Z |
dc.date.available.none.fl_str_mv |
2020-08-19T14:43:05Z |
dc.type.eng.fl_str_mv |
article |
dc.type.coarversion.fl_str_mv |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
dc.type.coar.fl_str_mv |
http://purl.org/coar/resource_type/c_6501 |
dc.type.spa.spa.fl_str_mv |
Artículo |
dc.identifier.doi.none.fl_str_mv |
https://doi.org/10.1063/1.5012987 |
dc.identifier.issn.none.fl_str_mv |
ISSN: 0021-8979 EISSN: 1089-7550 |
dc.identifier.uri.none.fl_str_mv |
https://repository.urosario.edu.co/handle/10336/27635 |
url |
https://doi.org/10.1063/1.5012987 https://repository.urosario.edu.co/handle/10336/27635 |
identifier_str_mv |
ISSN: 0021-8979 EISSN: 1089-7550 |
dc.language.iso.spa.fl_str_mv |
eng |
language |
eng |
dc.relation.citationIssue.none.fl_str_mv |
No. 11 |
dc.relation.citationStartPage.none.fl_str_mv |
114302 |
dc.relation.citationTitle.none.fl_str_mv |
Journal of Applied Physics |
dc.relation.citationVolume.none.fl_str_mv |
Vol. 123 |
dc.relation.ispartof.spa.fl_str_mv |
Journal of Applied Physics, ISSN: 0021-8979;EISSN: 1089-7550, Vol.123, No.11 (2018); pp. 114302 |
dc.relation.uri.spa.fl_str_mv |
https://aip.scitation.org/doi/10.1063/1.5012987 |
dc.rights.coar.fl_str_mv |
http://purl.org/coar/access_right/c_16ec |
dc.rights.acceso.spa.fl_str_mv |
Restringido (Acceso a grupos específicos) |
rights_invalid_str_mv |
Restringido (Acceso a grupos específicos) http://purl.org/coar/access_right/c_16ec |
dc.format.mimetype.none.fl_str_mv |
application/pdf |
dc.publisher.spa.fl_str_mv |
American Institute of Physics |
dc.source.spa.fl_str_mv |
Journal of Applied Physics |
institution |
Universidad del Rosario |
dc.source.instname.none.fl_str_mv |
instname:Universidad del Rosario |
dc.source.reponame.none.fl_str_mv |
reponame:Repositorio Institucional EdocUR |
repository.name.fl_str_mv |
Repositorio institucional EdocUR |
repository.mail.fl_str_mv |
edocur@urosario.edu.co |
_version_ |
1814167562190061568 |