Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorpt...

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Tipo de recurso:
Fecha de publicación:
2018
Institución:
Universidad del Rosario
Repositorio:
Repositorio EdocUR - U. Rosario
Idioma:
eng
OAI Identifier:
oai:repository.urosario.edu.co:10336/27635
Acceso en línea:
https://doi.org/10.1063/1.5012987
https://repository.urosario.edu.co/handle/10336/27635
Palabra clave:
Electromagnetism
Raman spectroscopy
Heterostructures
Doping
Nanowires
Finite-element analysis
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License
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id EDOCUR2_fddc2471f3459184f41db7f51e7bb32d
oai_identifier_str oai:repository.urosario.edu.co:10336/27635
network_acronym_str EDOCUR2
network_name_str Repositorio EdocUR - U. Rosario
repository_id_str
spelling fe833d2d-e690-4fc2-9070-3b14844850e4194747786006ae393e3-af0b-496c-9426-c36abc3cdf7b818f494a-9a83-4823-b8f9-5da2b82b0aff341232b0-a257-4e0e-a534-dd8a3b25098818cf83c1-b28a-4fc9-a91d-c0e4957d398161188177-22e8-457a-997c-9f3ee9b35242694b85bd-277e-4a0e-9e44-149ddcd2bb3ec24e4600-7c1b-4ffe-b668-1a71a24881c72020-08-19T14:43:05Z2020-08-19T14:43:05Z2018-03-16Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.application/pdfhttps://doi.org/10.1063/1.5012987ISSN: 0021-8979EISSN: 1089-7550https://repository.urosario.edu.co/handle/10336/27635engAmerican Institute of PhysicsNo. 11114302Journal of Applied PhysicsVol. 123Journal of Applied Physics, ISSN: 0021-8979;EISSN: 1089-7550, Vol.123, No.11 (2018); pp. 114302https://aip.scitation.org/doi/10.1063/1.5012987Restringido (Acceso a grupos específicos)http://purl.org/coar/access_right/c_16ecJournal of Applied Physicsinstname:Universidad del Rosarioreponame:Repositorio Institucional EdocURElectromagnetismRaman spectroscopyHeterostructuresDopingNanowiresFinite-element analysisElectromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approachEfectos de mejora del campo electromagnético en nanocables semiconductores del grupo IV. Un enfoque de espectroscopía RamanarticleArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501Pura, J. L.Anaya, Juan-ManuelSouto, J.Prieto, A. C.Rodríguez, A.Rodríguez, T.Periwal, P.Baron, T.Jiménez, J.10336/27635oai:repository.urosario.edu.co:10336/276352021-08-05 17:29:19.263https://repository.urosario.edu.coRepositorio institucional EdocURedocur@urosario.edu.co
dc.title.spa.fl_str_mv Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
dc.title.TranslatedTitle.spa.fl_str_mv Efectos de mejora del campo electromagnético en nanocables semiconductores del grupo IV. Un enfoque de espectroscopía Raman
title Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
spellingShingle Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
Electromagnetism
Raman spectroscopy
Heterostructures
Doping
Nanowires
Finite-element analysis
title_short Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
title_full Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
title_fullStr Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
title_full_unstemmed Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
title_sort Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
dc.subject.keyword.spa.fl_str_mv Electromagnetism
Raman spectroscopy
Heterostructures
Doping
Nanowires
Finite-element analysis
topic Electromagnetism
Raman spectroscopy
Heterostructures
Doping
Nanowires
Finite-element analysis
description Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.
publishDate 2018
dc.date.created.spa.fl_str_mv 2018-03-16
dc.date.accessioned.none.fl_str_mv 2020-08-19T14:43:05Z
dc.date.available.none.fl_str_mv 2020-08-19T14:43:05Z
dc.type.eng.fl_str_mv article
dc.type.coarversion.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_6501
dc.type.spa.spa.fl_str_mv Artículo
dc.identifier.doi.none.fl_str_mv https://doi.org/10.1063/1.5012987
dc.identifier.issn.none.fl_str_mv ISSN: 0021-8979
EISSN: 1089-7550
dc.identifier.uri.none.fl_str_mv https://repository.urosario.edu.co/handle/10336/27635
url https://doi.org/10.1063/1.5012987
https://repository.urosario.edu.co/handle/10336/27635
identifier_str_mv ISSN: 0021-8979
EISSN: 1089-7550
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.citationIssue.none.fl_str_mv No. 11
dc.relation.citationStartPage.none.fl_str_mv 114302
dc.relation.citationTitle.none.fl_str_mv Journal of Applied Physics
dc.relation.citationVolume.none.fl_str_mv Vol. 123
dc.relation.ispartof.spa.fl_str_mv Journal of Applied Physics, ISSN: 0021-8979;EISSN: 1089-7550, Vol.123, No.11 (2018); pp. 114302
dc.relation.uri.spa.fl_str_mv https://aip.scitation.org/doi/10.1063/1.5012987
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_16ec
dc.rights.acceso.spa.fl_str_mv Restringido (Acceso a grupos específicos)
rights_invalid_str_mv Restringido (Acceso a grupos específicos)
http://purl.org/coar/access_right/c_16ec
dc.format.mimetype.none.fl_str_mv application/pdf
dc.publisher.spa.fl_str_mv American Institute of Physics
dc.source.spa.fl_str_mv Journal of Applied Physics
institution Universidad del Rosario
dc.source.instname.none.fl_str_mv instname:Universidad del Rosario
dc.source.reponame.none.fl_str_mv reponame:Repositorio Institucional EdocUR
repository.name.fl_str_mv Repositorio institucional EdocUR
repository.mail.fl_str_mv edocur@urosario.edu.co
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