Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys
We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn 2 Sb) and ferromagnetic (Mn 2 Sb 2 ) phases within the fi...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2017
- Institución:
- Universidad del Rosario
- Repositorio:
- Repositorio EdocUR - U. Rosario
- Idioma:
- eng
- OAI Identifier:
- oai:repository.urosario.edu.co:10336/22666
- Acceso en línea:
- https://doi.org/10.1016/j.apsusc.2016.11.096
https://repository.urosario.edu.co/handle/10336/22666
- Palabra clave:
- Ferrimagnetism
Magnetrons
Solvents
Spintronics
Transport properties
X ray powder diffraction
Applied magnetic fields
Density of localized state
Diffusional models
Direct-current magnetrons
Electrical transport
Ferrimagnetic
Temperature-dependent resistivity
Variable range hopping
Thin films
Diffusional model
Electrical transport
Ferrimagnetic
Spintronics
Thin film
- Rights
- License
- Abierto (Texto Completo)
Summary: | We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn 2 Sb) and ferromagnetic (Mn 2 Sb 2 ) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms. © 2016 Elsevier B.V. |
---|