Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates

We show RF resistors able to operate above 8 GHz while handing >100 W can be obtained by switching the resistor substrate to CVD diamond. Obtaining high power resistors able to operate above S-Band requires reducing its parasitic electrical characteristics to a minimum. In this work we demonstrat...

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Autores:
Tipo de recurso:
Fecha de publicación:
2017
Institución:
Universidad del Rosario
Repositorio:
Repositorio EdocUR - U. Rosario
Idioma:
eng
OAI Identifier:
oai:repository.urosario.edu.co:10336/28415
Acceso en línea:
https://repository.urosario.edu.co/handle/10336/28415
Palabra clave:
RF resistor
Capacitance per watt
Diamond
High power and frequency
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License
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spelling 19474778600cf63c47e-521c-404c-b65f-426da3c1512b9db20019-c87d-49f1-9632-01ee48f9dbf82020-08-28T15:48:09Z2020-08-28T15:48:09Z2017-01-01We show RF resistors able to operate above 8 GHz while handing >100 W can be obtained by switching the resistor substrate to CVD diamond. Obtaining high power resistors able to operate above S-Band requires reducing its parasitic electrical characteristics to a minimum. In this work we demonstrate that this cannot be achieved with traditional substrates (AlN and BeO), but it is straightforward when using CVD diamond. This is clearly illustrated through the resistor's parameter 'capacitance per watt'. We also compare the performance of the different substrates for high power resistors using a model of a 75 W Wilkinson divider operating at 10 GHz.application/pdfhttps://repository.urosario.edu.co/handle/10336/28415engCS MANTECHCS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing TechnologyCS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, (2017); 6 pp.https://s3.amazonaws.com/dntstatic//ec72c3c0-919e-450d-664c-3fa994bc2996Abierto (Texto Completo)http://purl.org/coar/access_right/c_abf2CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technologyinstname:Universidad del Rosarioreponame:Repositorio Institucional EdocURRF resistorCapacitance per wattDiamondHigh power and frequencyOvercoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substratesSuperar la limitación de alta potencia de las resistencias de película delgada a frecuencias de GHz utilizando sustratos de diamante CVDarticleArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501Anaya, Juan-ManuelObeloer, T.Twitchen, D. J.10336/28415oai:repository.urosario.edu.co:10336/284152021-08-10 17:05:21.548https://repository.urosario.edu.coRepositorio institucional EdocURedocur@urosario.edu.co
dc.title.spa.fl_str_mv Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates
dc.title.TranslatedTitle.spa.fl_str_mv Superar la limitación de alta potencia de las resistencias de película delgada a frecuencias de GHz utilizando sustratos de diamante CVD
title Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates
spellingShingle Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates
RF resistor
Capacitance per watt
Diamond
High power and frequency
title_short Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates
title_full Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates
title_fullStr Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates
title_full_unstemmed Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates
title_sort Overcoming high power limitation of thin film resistors at GHz frequencies using CVD diamond substrates
dc.subject.keyword.spa.fl_str_mv RF resistor
Capacitance per watt
Diamond
High power and frequency
topic RF resistor
Capacitance per watt
Diamond
High power and frequency
description We show RF resistors able to operate above 8 GHz while handing >100 W can be obtained by switching the resistor substrate to CVD diamond. Obtaining high power resistors able to operate above S-Band requires reducing its parasitic electrical characteristics to a minimum. In this work we demonstrate that this cannot be achieved with traditional substrates (AlN and BeO), but it is straightforward when using CVD diamond. This is clearly illustrated through the resistor's parameter 'capacitance per watt'. We also compare the performance of the different substrates for high power resistors using a model of a 75 W Wilkinson divider operating at 10 GHz.
publishDate 2017
dc.date.created.spa.fl_str_mv 2017-01-01
dc.date.accessioned.none.fl_str_mv 2020-08-28T15:48:09Z
dc.date.available.none.fl_str_mv 2020-08-28T15:48:09Z
dc.type.eng.fl_str_mv article
dc.type.coarversion.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_6501
dc.type.spa.spa.fl_str_mv Artículo
dc.identifier.uri.none.fl_str_mv https://repository.urosario.edu.co/handle/10336/28415
url https://repository.urosario.edu.co/handle/10336/28415
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.citationTitle.none.fl_str_mv CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
dc.relation.ispartof.spa.fl_str_mv CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, (2017); 6 pp.
dc.relation.uri.spa.fl_str_mv https://s3.amazonaws.com/dntstatic//ec72c3c0-919e-450d-664c-3fa994bc2996
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.rights.acceso.spa.fl_str_mv Abierto (Texto Completo)
rights_invalid_str_mv Abierto (Texto Completo)
http://purl.org/coar/access_right/c_abf2
dc.format.mimetype.none.fl_str_mv application/pdf
dc.publisher.spa.fl_str_mv CS MANTECH
dc.source.spa.fl_str_mv CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
institution Universidad del Rosario
dc.source.instname.none.fl_str_mv instname:Universidad del Rosario
dc.source.reponame.none.fl_str_mv reponame:Repositorio Institucional EdocUR
repository.name.fl_str_mv Repositorio institucional EdocUR
repository.mail.fl_str_mv edocur@urosario.edu.co
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