Laser-dressing and magnetic-field effects on shallow-donor impurity states in semiconductor GaAs–Ga1−xAlxAs cylindrical quantum-well wires

The influence of an intense laser field on shallow-donor states in cylindrical GaAs–Ga1−xAlxAs quantum-well wires under an external magnetic field applied along the wire axis is theoretically studied. Numerical calculations are performed in the framework of the effective-mass approximation, and the impurity energies corresponding to the ground state and 2p ± excited states are obtained via a variational procedure. The laser-field effects on the shallow-donor states are considered within the extended dressed-atom approach, which allows one to treat the problem 'impurity + heterostructure + laser field + magnetic field' as a renormalized 'impurity + heterostructure + magnetic field' problem, in which the laser effects are taken into account through a renormalization of both the conduction-band effective mass and fundamental semiconductor gap.

• Fecha de publicación: 2010
• Institución: Ministerio de Ciencia Tecnología e Innovación
• Repositorio: Repositorio Institucional de Minciencias
• Idioma: eng
• OAI Identifier: oai:repositorio.minciencias.gov.co:20.500.14143/18438
• Acceso en línea: https://repositorio.minciencias.gov.co/handle/20.500.14143/18438
• Palabra clave: Electrónica cuántica; Campos magnéticos; Campos electromagnéticos; Energía mecánica; Dispositivos semiconductores; Diodos semiconductores
• License: http://purl.org/coar/access_right/c_f1cf