Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields
The effects of a laser field on the conduction-electron effective Landé g factor in GaAs–Ga1−xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2009
- Institución:
- Ministerio de Ciencia Tecnología e Innovación
- Repositorio:
- Repositorio Institucional de Minciencias
- Idioma:
- eng
- OAI Identifier:
- oai:repositorio.minciencias.gov.co:20.500.14143/18426
- Acceso en línea:
- https://repositorio.minciencias.gov.co/handle/20.500.14143/18426
- Palabra clave:
- Campos magnéticos
Energía mecánica
Dispositivos semiconductores
Diodos semiconductores
Energía mecánica
- Rights
- License
- http://purl.org/coar/access_right/c_f1cf
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Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fieldsCampos magnéticosEnergía mecánicaDispositivos semiconductoresDiodos semiconductoresEnergía mecánicaThe effects of a laser field on the conduction-electron effective Landé g factor in GaAs–Ga1−xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Landé factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity.Departamento Administrativo de Ciencia, Tecnología e Innovación [CO] Colciencias1106-452-21296Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicasno2018-08-02T22:34:14Z2018-08-02T22:34:14Z2009-05info:eu-repo/date/embargoEnd/2024-01-31Artículo científicoinfo:eu-repo/semantics/articlehttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_2df8fbb1pdf8 páginasapplication/pdf0022-37271361-6463https://repositorio.minciencias.gov.co/handle/20.500.14143/1842610.1088/0022-3727/42/11/115304Journal of Physics D: Applied Physics, Vol. 42, Num. 11; 2009Contiene 16 referencias bibliográficas. Véase el documento adjuntoengControl cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a>Colombiahttp://purl.org/coar/access_right/c_f1cfLópez, F. E.Reyes Gómez, E.Brandi, H. S.Porras Montenegro, NelsonOliveira, L. E.oai:repositorio.minciencias.gov.co:20.500.14143/184262023-11-29T17:48:16Z |
| dc.title.none.fl_str_mv |
Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields |
| title |
Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields |
| spellingShingle |
Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields Campos magnéticos Energía mecánica Dispositivos semiconductores Diodos semiconductores Energía mecánica |
| title_short |
Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields |
| title_full |
Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields |
| title_fullStr |
Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields |
| title_full_unstemmed |
Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields |
| title_sort |
Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields |
| dc.subject.none.fl_str_mv |
Campos magnéticos Energía mecánica Dispositivos semiconductores Diodos semiconductores Energía mecánica |
| topic |
Campos magnéticos Energía mecánica Dispositivos semiconductores Diodos semiconductores Energía mecánica |
| description |
The effects of a laser field on the conduction-electron effective Landé g factor in GaAs–Ga1−xAlxAs quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Landé factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity. |
| publishDate |
2009 |
| dc.date.none.fl_str_mv |
2009-05 2018-08-02T22:34:14Z 2018-08-02T22:34:14Z info:eu-repo/date/embargoEnd/2024-01-31 |
| dc.type.none.fl_str_mv |
Artículo científico info:eu-repo/semantics/article |
| dc.type.coarversion.fl_str_mv |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| dc.type.coar.fl_str_mv |
http://purl.org/coar/resource_type/c_2df8fbb1 |
| dc.identifier.none.fl_str_mv |
0022-3727 1361-6463 https://repositorio.minciencias.gov.co/handle/20.500.14143/18426 10.1088/0022-3727/42/11/115304 |
| identifier_str_mv |
0022-3727 1361-6463 10.1088/0022-3727/42/11/115304 |
| url |
https://repositorio.minciencias.gov.co/handle/20.500.14143/18426 |
| dc.language.none.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
Control cuántico de las propiedades electrónicas y de espín en nanoestructuras inorgánicas, orgánicas y biológicas. La publicación completa está disponible en : <a href="http://repositorio.colciencias.gov.co:80/handle/11146/18424" target="blank">http://repositorio.colciencias.gov.co:80/handle/11146/18424</a> |
| dc.rights.coar.fl_str_mv |
http://purl.org/coar/access_right/c_f1cf |
| rights_invalid_str_mv |
http://purl.org/coar/access_right/c_f1cf |
| dc.format.none.fl_str_mv |
pdf 8 páginas application/pdf |
| dc.coverage.none.fl_str_mv |
Colombia |
| dc.source.none.fl_str_mv |
Journal of Physics D: Applied Physics, Vol. 42, Num. 11; 2009 Contiene 16 referencias bibliográficas. Véase el documento adjunto |
| institution |
Ministerio de Ciencia Tecnología e Innovación |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
|
| _version_ |
1860676511542018048 |