Análisis computacional de la convergencia del método de Newton-Raphson para el estudio de circuitos con elementos memristivos

The advent of the memristor as a fourth passive electronic element, has opened a research area that seeks to strengthen the study of memory devices and its construction. In fact, the memristor -resistance memoryhas allowed to extend the conception of memristive system to other elements such as memcapacitors and meminductors. As a contribution to the study of circuits including memristive elements, this paper analyzes the computational solution of a nonlinear ordinary differential equation from a MRLC circuit, Memristor-Resistor-Inductor-Capacitor, by using the Newton-Raphson method, with a trapezoidal discretization method, to contrast it with the RLC circuit as its asymptotic limit when M ? 0. The result of this implementation will serve as a tool to validate, computationally, a further parametric study of circuits that include memristive elements.

• Autores: Salamanca, Julian; Leal, J; Rodriguez, J
• Tipo de recurso: Article of journal
• Fecha de publicación: 2014
• Institución: Universidad Cooperativa de Colombia
• Repositorio: Repositorio UCC
• OAI Identifier: oai:repository.ucc.edu.co:20.500.12494/42869
• Acceso en línea: https://doi.org/10.6018/eglobal.16.1.2227951; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860121562&doi=10.3109%2f09638288.2011.631684&partnerID=40&md5=98e93c365f5b9fef2f0b0736f95da9fc; https://hdl.handle.net/20.500.12494/42869
• Palabra clave: Memristive systems Newton-Raphson; Memristor; Non-linear differential equations
• Rights: closedAccess
• License: http://purl.org/coar/access_right/c_14cb